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v ces = 600v i c = 7.5a, t c = 100c t sc 3 s, t j(max) = 150c v ce(on) typ. = 1.60v @ ic = 10a

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#$% e g n-channel c gc e gate collector emitter form quantity IRG7IC18FDpbf to-220 fullpak tube 50 IRG7IC18FDpbf base part number package type standard pack orderable part number insulated gate bipolar transistor withultrafast soft recovery diode 1 www.irf.com ? 2012 international rectifier july 27, 2012 IRG7IC18FDpbf features benefits low v ce(on) high efficienct motor drive application zero v ce(on) temperature coefficient efficiency stable over temperature ultra fast soft recovery co-pak diode optimized trade-off between lo w losses and emi performance square rbsoa and 100% clamp il tested rugged hard switching operation 3 s short circuit capability enables short circuit protection sche me fully isolated fullpak package easy heatsink assembly lead-free, rohs compliant environmentally friendlier absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 14 i c @ t c = 100c continuous collector current 7.5 i nominal nominal current 24 i cm pulse collector current, v ge = 15v 40 i lm clamped inductive load current, v ge = 20v 40 a i f @ t c = 25c diode continous forward current 14 i f @ t c = 100c diode continous forward current 7.5 i fm diode maximum forward current 40 v ge continuous gate-to-emitter voltage 20 v v ge gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 30 p d @ t c = 100c maximum power dissipation 12 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) w downloaded from: http:///
IRG7IC18FDpbf www.irf.com ? 2012 international rectifier july 27, 2012 2 notes: v cc = 80% (v ces ), v ge = 20v, l = 1.05mh, r g = 47 . pulse width limited by max. junction temperature. r is measured at t j of approximately 90c. maximum limits are based on statistical sample size characterization. thermal resistance parameter min. typ. max. units r qjc (igbt) thermal resistance junction-to-case-(each igbt) CCC CCC 4.1 r qjc (diode) thermal resistance junction-to-case-(each diode) CCC CCC 5.1 r qcs thermal resistance, case-to-sink (flat, greased surface) CCC 0.50 CCC r qja thermal resistance, junction-to-ambient (typical socket mount) CCC CCC 65 c/w electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br) ces collector-to-emitter breakdown voltage 600 v v ge = 0v, i c = 250 a ? v (br)ces / ? t j temperature coeff. of breakdown voltage 0.62 v/c v ge = 0v, i c = 1.0ma (25c-150c) 1 . 4 0 i c = 5a, v ge = 15v, t j = 25c 1.60 1.85 i c = 10a, v ge = 15v, t j = 25c 1.20 i c = 5a, v ge = 15v, t j = 150c 1 . 6 0 i c = 10a, v ge = 15v, t j = 150c v ge( th) gate threshold voltage 4.5 7.0 v v ce = v ge , i c = 420 a ? v ge(th) / ? tj threshold voltage temp. coefficient -14 mv/c v ce = v ge , i c = 420 a (25c - 150c) gfe forward transconductance 10 s v ce = 50v, i c = 10a, pw = 20 s i ces collector-to-emitter leakage current 1.0 25 v ge = 0v, v ce = 600v 3 6 0 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop 1.45 1.75 i f = 10a 1 . 4 0 i f = 10a, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) 40 60 i c = 10a q ge gate-to-emitter charge (turn-on) 8 12 nc v ge = 15v q gc gate-to-collector charge (turn-on) 20 30 v cc = 400v e on turn-on switching loss 350 570 e of f turn-off switching loss 415 630 j e total total switching loss 765 1200 i c = 10a, v cc = 400v, v ge = 15v t d(on) turn-on delay time 30 45 r g = 47 , l = 1.05mh, t j = 25c t r rise time 40 50 ns energy losses include tail & diode reverse recovery t d(off) turn-off delay time 180 200 t f fall time 170 190 e on turn-on switching loss 460 e of f turn-off switching loss 800 j e total total switching loss 1260 i c = 10a, v cc = 400v, v ge =15v t d(on) turn-on delay time 20 r g = 47 , l= 1.05mh, t j = 150c t r rise time 40 ns energy losses include tail & diode reverse recovery t d(off) turn-off delay time 225 t f fall time 370 c ies input capacitance 1010 v ge = 0v c oes output capacitance 39 v cc = 30v c res reverse transfer capacitance 25 f = 1.0mhz t j = 150c, i c = 40a rbsoa reverse bias safe operating area full square v cc
rg = 47 , v ge = +20v to 0v scsoa short circuit safe operating area v ge = 15v, v cc
rg = 47 , r shunt = 25m , t c = 100c erec reverse recovery energy of the diode 80 jt j = 150c t rr diode reverse recovery time 95 ns v cc = 400v, i f = 10a i rr peak reverse recovery current 11 a v ge = 15v, rg = 47 , l = 880 h 3 s pf v collector-to-emitter saturation voltage v ce(on) a v conditions downloaded from: http:///
IRG7IC18FDpbf www.irf.com ? 2012 international rectifier july 27, 2012 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - maximum dc collector current vs. case temperature fig. 3 - power dissipation vs. case temperature fig. 4 - forward soa t c = 25c, t j 150c, v ge =15v fig. 5 - reverse bias soa t j = 150c, v ge =20v 25 50 75 100 125 150 t c (c) 0 2 4 6 8 10 12 14 i c ( a ) 25 50 75 100 125 150 t c (c) 0 5 10 15 20 25 30 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 i c ( a ) 0.1 1 10 100 f , frequency ( khz ) 0 2 4 6 8 10 12 14 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tcase = 100c gate drive as specified power dissipation = 12w i square wave: v cc diode as specified 1 10 100 1000 v ce (v) 0.01 0.1 1 10 100 i c ( a ) 1msec 10 sec 100 sec tc = 25c tj = 150c single pulse dc downloaded from: http:///
IRG7IC18FDpbf www.irf.com ? 2012 international rectifier july 27, 2012 4 fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20 s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20 s fig. 8 - typ. igbt output characteristics t j = 150c; tp = 20 s fig. 9 - typ. diode forward characteristics tp = 20 s fig. 11 - typical v ce vs. v ge t j = 25c fig. 10 - typical v ce vs. v ge t j = -40c 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f (v) 0 10 20 30 40 i f ( a ) -40c 25c 150c 5 1 01 52 0 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 20a 5 1 01 52 0 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 20a downloaded from: http:///
IRG7IC18FDpbf www.irf.com ? 2012 international rectifier july 27, 2012 5 fig. 12 - typical v ce vs. v ge t j = 150c fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20 s fig. 14 - typ. energy loss vs. i c ; t j = 150c l = 1.05mh; v ce = 400v, r g = 47 ; v ge = 15v fig. 15 - typ. switching time vs. i c ; t j = 150c l = 1.05mh; v ce = 400v, r g = 47 ; v ge = 15v fig. 16 - typ. energy loss vs. r g ; t j = 150c l = 1.05mh; v ce = 400v, i ce = 10a; v ge = 15v fig. 17 - typ. switching time vs. r g ; t j = 150c l = 1.05mh; v ce = 400v, i ce = 10a; v ge = 15v 5 1 01 52 0 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 20a 567891 01 11 2 v ge (v) 0 10 20 30 40 i c e ( a ) t j = 25c t j = 150c 0 5 10 15 20 i c (a) 0 200 400 600 800 1000 1200 1400 1600 e n e r g y ( j ) e off e on 0 5 10 15 20 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 rg ( ) 200 400 600 800 1000 e n e r g y ( j ) e off e on 0 20 40 60 80 100 r g ( ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on downloaded from: http:///
IRG7IC18FDpbf www.irf.com ? 2012 international rectifier july 27, 2012 6 fig. 18 - typ. diode i rr vs. i f t j = 150c fig. 19 - typ. diode i rr vs. r g t j = 150c fig. 20 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 10a; t j = 150c fig. 21 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 150c fig. 22 - typ. diode e rr vs. i f t j = 150c 0 5 10 15 20 25 i f (a) 5 10 15 20 i r r ( a ) r g = 10 r g = 22 r g = 47 r g = 100 0 25 50 75 100 r g ( ) 6 8 10 12 14 16 18 i r r ( a ) 200 300 400 500 600 di f /dt (a/ s) 6 8 10 12 14 16 i r r ( a ) 100 300 500 700 900 di f /dt (a/ s) 200 400 600 800 1000 1200 q r r ( n c ) 22 10 100 47 10a 5a 20a 0 5 10 15 20 25 i f (a) 0 50 100 150 200 e n e r g y ( j ) r g = 10 r g = 22 r g = 47 r g = 100 fig. 23 - typ. v ge vs. short circuit time v cc =400v, t c =25c 8 1 01 21 41 61 8 v ge (v) 3 5 7 9 11 13 15 t i m e ( s ) 10 30 50 70 90 110 130 c u r r e n t ( a ) t sc i sc downloaded from: http:///
IRG7IC18FDpbf www.irf.com ? 2012 international rectifier july 27, 2012 7 fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig 26. maximum transient thermal impedance, junction-to-case (igbt) fig. 25 - typical gate charge vs. v ge i ce = 10a; l = 1mh fig. 27. maximum transient thermal impedance, junction-to-case (diode) 0 100 200 300 400 500 v ce (v) 1 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 5 10 15 20 25 30 35 40 45 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.4924 0.000340.6397 0.00148 1.3151 0.08701 1.6558 2.12610 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.5922 0.000241.4078 0.00127 1.5914 0.04596 1.8102 1.90530 downloaded from: http:///
IRG7IC18FDpbf www.irf.com ? 2012 international rectifier july 27, 2012 8 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v dc 4x dut vcc downloaded from: http:///
IRG7IC18FDpbf www.irf.com ? 2012 international rectifier july 27, 2012 9 fig. wf3 - typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 150c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -5 0 5 10 15 20 25 30 -100 0 100 200 300 400 500 600 -0.2 -0.1 0 0.1 0.2 0.3 i ce (a) v ce (v) time ( s) test current 90% i ce 5% v ce 10% i ce tr eon loss -15 -10 -5 0 5 10 15 -0.25 0.00 0.25 0.50 i f (a) time ( s) peak i rr t rr q rr -50 0 50 100 150 200 250 -100 0 100 200 300 400 500 -2-101234567 ice (a) vce (v) time (us) vce ice -5 0 5 10 15 20 25 30 -100 0 100 200 300 400 500 600 -0.4-0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 i ce (a) v ce (v) time( s) 90% i ce 5% v ce 10% i ce eoff loss tf downloaded from: http:///
IRG7IC18FDpbf www.irf.com ? 2012 international rectifier july 27, 2012 10 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-220ab full-pak package outlinedimensions are shown in millimeters (inches) to-220ab full-pak part marking information logo in the assembly line "k" as s embl ed on ww 24, 2001 example: lot code 3432 this is an irfi840g wi t h as s e mb l y part number int ernational rectifier 124k irf i840g note: "p" in assembly line position i ndi cates "l ead- f r ee" line k week 24 year 1 = 2001 dat e code lot code as s e mb l y 34 32 to-220ab full-pak package is not recommended for surface mount application. downloaded from: http:///
IRG7IC18FDpbf www.irf.com ? 2012 international rectifier july 27, 2012 11 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release. qualification information ? moisture sensitivity level to220 fullpak not applicable qualification level industrial (per jedec jesd47f guidelines ) ?? comments: this part number(s) passed industrial qualification. irs consumer qualification level is granted by extension of the higher industrial level. rohs compliant yes downloaded from: http:///

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